Characteristics of vanadium dioxide films deposited by RF-magnetron sputter deposition technique using V-metal target

✍ Scribed by Sun Jin Yun; Jung Wook Lim; Byung-Gyu Chae; Bong Jun Kim; Hyun-Tak Kim

• Publisher: Elsevier Science
• Year: 2008
• Tongue: English
• Weight: 145 KB
• Volume: 403
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2007.10.362

✦ Synopsis

Vanadium dioxide films were deposited using reactive RF-magnetron sputter deposition technique and characterized without or with post-annealing process for the application of thermal sensors. The film thickness variation on a 4-in wafer was less than 72%. As-deposited film showing an abrupt metal-insulator transition (MIT) could be obtained with O 2 fraction of 6%. The films deposited at 400 and 450 1C showed abrupt changes of resistance in the order of 10 3 near typical MIT temperature of VO 2 without post-annealing. The 110-nm-thick VO 2 film deposited at 450 1C on c-sapphire revealed the resistance change of 1.2 Â 10 4 near 68 1C after annealing at 510 1C.