โ Scribed by X.P. Cui; W.Z. Fang; S.W. Sun; C.J. Zhang; H.L. Xu; J.R. Yang
No coin nor oath required. For personal study only.
The configurations and distributions of triangular pyramid etch pits on the (1 1 1)B face of CdZnTe revealed by Everson etch were studied using a scanning electron microscope (SEM), an optical microscope and a confocal laser scanning microscope (CLSM). Six types of triangular pyramid etch pits with different configurations were observed, one for the first time. These etch pits correspond to threading dislocations in the materials. By measuring the depths and orientations of the pit tips as well as the side lengths of the triangular pits on the surface, the orientations of the dislocations were determined. They are /2 ยฏ1 ยฏ1S, /1 ยฏ3 ยฏ1 ยฏS, /1 ยฏ1 ยฏ1S, /1 5 ยฏ1S, /0 3 ยฏ1S and /1 ยฏ1 ยฏ0S for the six types of triangular pyramid etch pits. Among them, dislocations with /2 ยฏ1 ยฏ1S, /1 ยฏ1 ยฏ1S, /1 5 ยฏ1S and /0 3 ยฏ1S orientations have higher densities in CdZnTe materials. It was also found that the proportion of triangular pyramid etch pit to total etch pits is variable for different CdZnTe wafers and related to the stoichiometry of CdZnTe melt. These results show that Everson etch can reveal more information of CdZnTe materials than etch pit density (EPD).
๐ SIMILAR VOLUMES
NOTE Correlation of the Pit Depth in Crystal Etching by Dissolution A theoretically rigorous formulation relating the pit depth to dissolution time for crystal etching is presented and verified. The data of K. Dunn, E. Daniel, P. J. Shuler, H. J. Chen, Y. Tang, and T. F. Yen [J. Colloid Interface Sc