Characteristics of SiOxNy films deposited by inductively coupled plasma enhanced chemical vapor deposition using HMDS/NH3/O2/Ar for water vapor diffusion barrier

✍ Scribed by J.H. Lee; C.H. Jeong; H.B. Kim; J.T. Lim; S.J. Kyung; G.Y. Yeom

• Book ID: 108289433
• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 311 KB
• Volume: 515
• Category: Article
• ISSN: 0040-6090
• DOI: 10.1016/j.tsf.2006.07.056