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Characteristics of silicon p–n junction formed by ion implantation with in situ ultrasound treatment

✍ Scribed by V.P. Melnik; Y.M. Olikh; V.G. Popov; B.M. Romanyuk; Y.V. Goltvyanskii; A.A. Evtukh

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

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