Characteristics of semi-insulating, Fe-doped GaN substrates
✍ Scribed by Vaudo, Robert P. ;Xu, Xueping ;Salant, Allan ;Malcarne, Joseph ;Brandes, George R.
- Publisher
- John Wiley and Sons
- Year
- 2003
- Tongue
- English
- Weight
- 155 KB
- Volume
- 200
- Category
- Article
- ISSN
- 0031-8965
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
Fe distribution is studied in semi-insulating liquid-encapsulated Czochralski (LEC) Fe-doped InP, by means of spatially resolved photocurrent measurements. Local fluctuations of the extrinsic photocurrent are related to Fe distribution inhomogeneities, which are related to the dislocation atmosphere
## Abstract We report on device performance and reliability of our 3″ GaN high electron mobility transistor (HEMT) technology. AlGaN/GaN HEMT structures are grown on semi‐insulating SiC substrates by metal‐organic chemical vapor deposition (MOCVD) with sheet resistance uniformities better than 2%.
## Abstract We report on the cathodoluminescence (CL) of nominally undoped semi‐insulating GaN layers grown by hot‐wall metal‐organic chemical vapor deposition (MOCVD) at a threefold increase of the growth rate limited by the TMGa flow. The growth kinetics is such, that C is the only background imp