Carbon-tuned cathodoluminescence of semi-insulating GaN

✍ Scribed by Kakanakova-Georgieva, A. ;Forsberg, U. ;Janzén, E.

• Publisher: John Wiley and Sons
• Year: 2011
• Tongue: English
• Weight: 177 KB
• Volume: 208
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.201127135

✦ Synopsis

Abstract

We report on the cathodoluminescence (CL) of nominally undoped semi‐insulating GaN layers grown by hot‐wall metal‐organic chemical vapor deposition (MOCVD) at a threefold increase of the growth rate limited by the TMGa flow. The growth kinetics is such, that C is the only background impurity in the layers with controllably increasing concentration from 5 × 10^16^ to 6 × 10^17^ cm^−3^, while other background impurities, H, O and Si, are essentially at the SIMS detection levels. The hot‐wall MOCVD is not an ordinary approach to GaN growth process and this study corroborates a more perceptive outlook on the C incorporation in GaN and any potential C‐incorporation‐mediated luminescence, including the observed here blue luminescence (BL) at ∼417 nm, and the yellow luminescence (YL) with shifting peak position towards shorter wavelengths, ∼555–543–525 nm.