𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Characteristics of rare‐earth element erbium implanted in silicon

✍ Scribed by Tang, Y. S.; Heasman, K. C.; Gillin, W. P.; Sealy, B. J.

Book ID
118236105
Publisher
American Institute of Physics
Year
1989
Tongue
English
Weight
511 KB
Volume
55
Category
Article
ISSN
0003-6951

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Donor formation in silicon owing to ion
Donor formation in silicon owing to ion implantation of the rare earth metal erbium
✍ F.P. Widdershoven; J.P.M. Naus 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 317 KB

Schottky diodes in n-and pope silicon, implanted with erbium and subsequently annealed at 900 °C were characterized with capacitance-voltage (CV) and deep level transient spectroscopy (DL TS) techniques. The implanted samples showed an excess donor concentration with a depth profile similar to an er