𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Characteristics of Mobile Ions in the SiO2 Films of SiC-MOS Structures

✍ Scribed by Jang, Seong Joo; Song, H.J.; Oh, K.Y.; Lee, K.H.; Lim, Y.J.; Cho, Nam Ihn


Book ID
120509764
Publisher
Trans Tech Publications, Ltd.
Year
2002
Tongue
English
Weight
282 KB
Volume
389-393
Category
Article
ISSN
1662-9752

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Breakdown of SiO2 films in VLSI MOS stru
✍ J SuΓ±e; I Placencia; E FarrΓ©s; N Barniol; X Aymerich πŸ“‚ Article πŸ“… 1989 πŸ› Elsevier Science 🌐 English βš– 394 KB
Ion beam analysis of the SiO2/SiC interf
✍ G.V. Soares; F. Trombetta; P. SchΓΌtz; I.J.R. Baumvol; C. Radtke; F.C. Stedile πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 152 KB

Thermal oxidation of 6H-SiC was investigated by ion beam analysis techniques. The mechanisms of oxygen transport and incorporation were accessed by sequential oxidations in dry O 2 enriched or not in the 18 O isotope and subsequent determinations of the 18 O profiles. After sequential 16 O 2 / 18 O