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Characteristics of metal-insulated-semiconductor (MIS) like In0.2Ga0.8AsGaAs doped-channel structure

✍ Scribed by Lih-Wen Laih; Wen-Shiung Lour; Jung-Hui Tsai; Wen-Chau Liu; Cheng-Zu Wu; Kong-Beng Thei; Rong-Chau Liu


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
411 KB
Volume
39
Category
Article
ISSN
0038-1101

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