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Characteristics of in-situ deposited Si3N4⧸Si⧸In0.53Ga0.47As metal-insulator-semiconductor structures

✍ Scribed by D.S.L. Mui; A.L. Demirel; S. Strite; Z. Wang; J. Reed; D. Biswas; H. Morkoç

No coin nor oath required. For personal study only.

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