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Characteristics of growth and radiative recombination of epitaxial layers InAsxP1−x(0

✍ Scribed by V. A. Bykovskii; S. A. Manego; V. I. Osinskii

Publisher
Springer US
Year
1990
Tongue
English
Weight
549 KB
Volume
52
Category
Article
ISSN
0021-9037

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We investigated the growth of GaAs 1Àx Sb x (x ¼ 1.0, 0.82, 0.69, 0.44, 0.0) layers on Si (0 0 1) substrates using AlSb as a buffer layer. Epilayers were grown as a function of As beam equivalent pressure (BEP) under a constant Sb BEP, and they were then characterized by atomic force microscopy (AFM