Characteristics and physical mechanisms of positive bias and temperature stress-induced drain current degradation in HfSiON nMOSFETs

✍ Scribed by Chien-Tai Chan; Chun-Jung Tang; Tahui Wang; Wang, H.C.-H.; Tang, D.D.

• Book ID: 114618277
• Publisher: IEEE
• Year: 2006
• Tongue: English
• Weight: 319 KB
• Volume: 53
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2006.874160