Transport characteristics of a single-la
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Keita Konishi; Kanji Yoh
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Article
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2010
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Elsevier Science
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English
โ 631 KB
We have investigated transport characteristics of epitaxial graphene grown on semi-insulating siliconface 4H-silicon carbide (SiC) substrate by thermal decomposition method in relatively high N 2 pressure atmosphere. We have succeeded in forming 1-2 layers of graphene on SiC in controlled manner. Th