Characrerization of unstable point defects in crystals
β Scribed by I.V. Ostrovskii; O.A. Korotchenkov
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 342 KB
- Volume
- 82
- Category
- Article
- ISSN
- 0038-1098
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Single crystals of Sb 2 Te 3 doped with Pb atoms (c Pb β«Ψβ¬ 0+2.1Ψ10 20 atoms/cm 3 ) were characterized by the measurements of the re6ectivity in the plasma resonance frequency region, the Hall coe7cient, the electrical conductivity, and the Seebeck coe7cient. Measurements of the Hall coe7cient for a
The mechanical relaxation modes for paired point defects in h.c.p. structures have been calculated by use of group theory methods. The corresponding point group symmetry is D,, for interstitial-interstitial pairs and D,, for substitutional-interstitial or substitutional-substitutional and vacancy-va