Point Defects in Pb-Doped Sb2Te3 Single Crystals

✍ Scribed by T. Plecháček; J. Horák

• Publisher: Elsevier Science
• Year: 1999
• Tongue: English
• Weight: 190 KB
• Volume: 145
• Category: Article
• ISSN: 0022-4596
• DOI: 10.1006/jssc.1999.8242

✦ Synopsis

Single crystals of Sb 2 Te 3 doped with Pb atoms (c Pb ‫؍‬ 0+2.1؋10 20 atoms/cm 3 ) were characterized by the measurements of the re6ectivity in the plasma resonance frequency region, the Hall coe7cient, the electrical conductivity, and the Seebeck coe7cient. Measurements of the Hall coe7cient for a series of Pb-doped Sb 2 Te 3 crystals served to determine the concentration of holes as a function of the Pb content in the lattice. The obtained variation of the hole concentration is ascribed to the formation of substitutional defects Pb Sb and to the interaction of the Pb atoms entering into the lattice with anti-site defects and vacancies in the tellurium sublattice. Improved ideas on point defects in the Pb-doped Sb 2 Te 3 single crystals are formulated in this paper.