Chaotic behavior of quantum resonant tunneling diodes
β Scribed by Shi Gang Zhou; M. Sweeny; J.M. Xu; O. Berolo
- Publisher
- Elsevier Science
- Year
- 1991
- Tongue
- English
- Weight
- 612 KB
- Volume
- 52
- Category
- Article
- ISSN
- 0167-2789
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Hysteresis in the current-voltage curve of a resonant tunneling diode is simulated and analyzed in the quantum hydrodynamic (OHD) model for semiconductor devices. The simulations are the first to show hysteresis in the QHD equations and to confirm that bistability is an intrinsic property of the res
## Abstract Resonant tunneling diodes, which have the highest operating frequencies among solidβstate oscillating devices at millimeter and submillimeter wave frequencies, generate spurious lowβfrequency oscillations easily. As a method of suppressing spurious oscillation of negative resistance dev