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Channeling characterization of defects in silicon: an atomistic approach

✍ Scribed by M. Bianconi; E. Albertazzi; S. Balboni; L. Colombo; G. Lulli; A. Satta

Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
161 KB
Volume
230
Category
Article
ISSN
0168-583X

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Atomistic simulation of defects evolutio
Atomistic simulation of defects evolution in silicon during annealing after low energy self-ion implantation
✍ Min Yu; Ru Huang; Xing Zhang; Yangyuan Wang; Kunihiro Suzuki; Hideki Oka πŸ“‚ Article πŸ“… 2004 πŸ› Elsevier Science 🌐 English βš– 278 KB

Defects evolution in silicon during annealing after low energy Si + implantation is simulated by atomistic method in this paper. Distribution of implanted dopants and defects is simulated by molecular dynamic method. The experimental results published by Stolk et al. (J Appl Phys 81 (9) (1991) 6031)