Single-walled carbon nanotubes (SWNTs) grown on Si(1 0 0) were irradiated with X-ray having the spectrum with a peak at 277 eV. We measured Raman scattering spectra of the samples before and after the irradiation at various fluences and found that the relative intensity of the defect-related band, D
โฆ LIBER โฆ
Change of built-in-potential in heterostructures induced by X-ray irradiation
โ Scribed by Z.D. Kovalyuk; V.M. Katerynchuk; O.A. Politanska; O.M. Sydor; A.I. Savchuk; M.D. Raransky; M.Yu. Palamaryk
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 130 KB
- Volume
- 246
- Category
- Article
- ISSN
- 0168-583X
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