In this paper, ToF-SIMS dual beam depth profiles of H-terminated silicon wafers were performed with cesium primary ions and for different beam energies. The aim of this study was to investigate the influence of the cesium beam energy on the secondary ion yields during ToF-SIMS dual beam depth profil
โฆ LIBER โฆ
Cesium redeposition artifacts during low energy ToF-SIMS depth profiling
โ Scribed by R.G. Vitchev; J. Brison; L. Houssiau
- Book ID
- 108063928
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 264 KB
- Volume
- 255
- Category
- Article
- ISSN
- 0169-4332
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