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CeO2thin films grown on biaxially textured nickel (001)

✍ Scribed by Rongping Wang; Xuming Xiong; Xiangxin Guo; Yueliang Zhou; Huibin Lu; Shaohua Pan; Zhenghao Chen; Guozhen Yang

Book ID
105641703
Publisher
Springer
Year
1998
Tongue
English
Weight
288 KB
Volume
43
Category
Article
ISSN
1001-6538

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A solution process was used for the epitaxial growth of CeO 2 seed layers and thin films on Ni substrate material using inorganic cerium nitrate as a precursor. The precursor solution was prepared by dissolving cerium nitrate in acetyl acetone, 2-methoxyethanol and glycol. The CeO 2 thin films, spin

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Laue oscillations) appear close to the high-angle reflections. The film thickness can then be evaluated as: where W i and W i-1 are positions of adjacent satellite maxima.