CdZnTe for a wide band gap all thin film solar cell
โ Scribed by Kenneth A. Hay; Kenneth R. Zanio
- Publisher
- Elsevier Science
- Year
- 1987
- Weight
- 59 KB
- Volume
- 21
- Category
- Article
- ISSN
- 0379-6787
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๐ SIMILAR VOLUMES
A novel polycrystalline thin film solar cell based on alloys of CdS and CdTe is proposed and investigated. The structure consists of an n-type CdS~Tel \_~ (0.5 < x < 1) surface layer with a graded composition and hence a band gap which varies between 2.4 eV and 1.5 eV. The base layer consists of hom
Aimtract-Triple-junction (p-i-XI)~ photovoltaic devices, based on hydrogenated amorphous silicon thin tilmq have been prepared, exhibiting open-circuit voltages larger than 2 V, short-circuit currents of about SmAcm-' and overall photovoltaic e5ciencies higher than 6%. Such units can sustain water e