InGaAs / InGaAs strained layer superlattices (SLSs) are interesting candidates for optoelectronic device applications working in the \(1.55 \mu \mathrm{m}\) range. However, it was recognized very early that both the miniband widths and interband transition energies in these very shallow systems are
β¦ LIBER β¦
CBE growth of InGaAs for optoelectronic applications
β Scribed by F. Genova; G. Morello; G. Autore; L. Gastaldi
- Publisher
- Elsevier Science
- Year
- 1991
- Tongue
- English
- Weight
- 135 KB
- Volume
- 107
- Category
- Article
- ISSN
- 0022-0248
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