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CBE growth of 2%-strained InAsP MQWs for 1.5 μm wavelength laser diodes

✍ Scribed by H Sugiura; M Ogasawara; M Mitsuhara; M Itoh; Y Kondo


Book ID
108342642
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
166 KB
Volume
188
Category
Article
ISSN
0022-0248

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We report on round quantum dots grown on InP (100) substrate, which emit around 1.55 mm. At 10 K the full width at half maximum is as small as 28 meV, attesting a rather uniform size distribution. The carrier lifetimes are almost the same across the whole photoluminescence band, indicating the good