A Raman investigation on InP layers grown by Metal Organic Vapour Phase Epitaxy on GaAs (001) substrates, with thicknesses exceeding the critical thickness and ranging from 23 to \(280 \mathrm{~nm}\), is reported. The InP LO phonon shows an increasing frequency blueshift with decreasing layer thickn
Carry-over - A Fundamental Problem in the MOVPE Growth of Heterostructures
✍ Scribed by B. P. Keller; Dr. H. G. Brühl; Dozent Dr. W. Seifert
- Publisher
- John Wiley and Sons
- Year
- 1992
- Tongue
- English
- Weight
- 338 KB
- Volume
- 27
- Category
- Article
- ISSN
- 0232-1300
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