Carrier Transport in InGaN MQWs of Aquamarine- and Green-Laser Diodes
β Scribed by Sizov, D.S.; Bhat, R.; Zakharian, A.; Kechang Song; Allen, D.E.; Coleman, S.; Chung-en Zah
- Book ID
- 114571138
- Publisher
- IEEE
- Year
- 2011
- Tongue
- English
- Weight
- 912 KB
- Volume
- 17
- Category
- Article
- ISSN
- 1077-260X
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
## Abstract In this paper we investigate the waveguiding (WG) of direct green InGaN laser diodes grown on __c__βplane GaN substrates. The problem of parasitic modes emerges due to the reduced refractive index difference between the GaN waveguide and AlGaN cladding layers for green compared to blue
## Abstract The polarization of spontaneous edgeβemitting electroluminescence from nearβUV LDs with different cavity lengths (from 400 ΞΌm to 1000 ΞΌm) was studied. It was found that TE mode dominates in InGaN/AlGaN MQWs LDs, which is consistent with the theoretical calculation results of similar MQW
## Abstract InGaN quantum wells for direct green lasers with indium concentrations of about 30% are studied in respect to defect structure and influence of defects on device lifetime. A new test structure enables us to determine strain relaxation in Inβrich layers by Xβray diffraction even at typic