𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Carrier Transport and Optical Properties of InGaN SQW With Embedded AlGaN -Layer

✍ Scribed by Jongwoon Park; Kaneta, A.; Funato, M.; Kawakami, Y.


Book ID
117883170
Publisher
IEEE
Year
2006
Tongue
English
Weight
479 KB
Volume
42
Category
Article
ISSN
0018-9197

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Effect of coalescence layer thickness on
✍ Shields, Philip A. ;Charlton, Martin D. B. ;Lewins, Christopher J. ;Gao, Xiang ; πŸ“‚ Article πŸ“… 2012 πŸ› John Wiley and Sons 🌐 English βš– 379 KB

## Abstract The simulation, fabrication and optical characterization of InGaN/GaN MQW‐LEDs grown by MOVPE over embedded photonic quasi‐crystals (PQCs) are reported. Fully coalesced GaN layers as thin as 140 nm were grown over 1200 nm high air‐gap PQCs using an intermittent pulsed/normal growth meth