## Abstract The electron mobility in GaN is calculated as function of the carrier and impurity concentrations. From a comparison of the theoretically calculated mobilities with electrical parameters measured experimentally it follows that native donor and acceptor concentrations of the same order o
β¦ LIBER β¦
Carrier transport and luminescence properties of n-type GaN
β Scribed by Zeng Zhang; Rong Zhang; ZiLi Xie; Bin Liu; XiangQian Xiu; RuoLian Jiang; Ping Han; ShuLin Gu; Yi Shi; YouDou Zheng
- Book ID
- 107360245
- Publisher
- Science in China Press (SCP)
- Year
- 2008
- Tongue
- English
- Weight
- 775 KB
- Volume
- 51
- Category
- Article
- ISSN
- 1672-1799
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