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Carrier scattering mechanisms in manganese-doped gallium antimonide

✍ Scribed by N. L. Bazhenov; E. I. Georgitsé; L. M. Gutsulyak; R. I. Koshkodan; V. A. Smirnov


Book ID
112517126
Publisher
Springer
Year
1992
Tongue
English
Weight
340 KB
Volume
35
Category
Article
ISSN
1573-9228

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Zinc diffusion into tellurium doped gallium antimonide, GaSb, has been carried out as a function of time, temperature and antimony over-pressure. Total zinc profiles as well as cartier concentration profiles have been measured. Results indicate an inverse dependence of the diffusivity on antimony ov