Carrier concentration and Tc in HgBa2Ca2
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T. Watanabe; T. Tonozuka; H. Ihara; K. Tokiwa; M. Hirabayashi
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Article
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1994
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Elsevier Science
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English
โ 218 KB
The correlation between carrier concentrations and Tc's was investigated in HgBa2 Ca2Cua Os+~. The Tc increased linearly with decreasing carrier concentration. The maximum Tc value (133.2 I() w~ obtained at a carrier concentration of 2.0 ร 1021 cm -a, which corresponds to 0.16 holes per CuO2 plane.