𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Carrier concentration and Tc in HgBa2Ca2Cu3O8+z

✍ Scribed by T. Watanabe; T. Tonozuka; H. Ihara; K. Tokiwa; M. Hirabayashi

Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
218 KB
Volume
235-240
Category
Article
ISSN
0921-4534

No coin nor oath required. For personal study only.

✦ Synopsis

The correlation between carrier concentrations and Tc's was investigated in HgBa2 Ca2Cua Os+~. The Tc increased linearly with decreasing carrier concentration. The maximum Tc value (133.2 I() w~ obtained at a carrier concentration of 2.0 Γ— 1021 cm -a, which corresponds to 0.16 holes per CuO2 plane. On the other hand, the resistivity increased monotonically with decreasing carrier concentration. :rl,e temperature dependence of inverse Hall mobility shows a T2-dependence below about 240 K. In this range the resistivity of the sample with the highest Tc deviates clearly from linear dependence on the temperature.

πŸ“œ SIMILAR VOLUMES

Superconductivity, structure and resisti
Superconductivity, structure and resistivity in HgBa2Ca2Cu3O8+Ξ΄
✍ Z.J. Huang; R.L. Meng; X.D. Qiu; Y.Y. Sun; J. Kulik; Y.Y. Xue; C.W. Chu πŸ“‚ Article πŸ“… 1993 πŸ› Elsevier Science 🌐 English βš– 427 KB

Samples of HgBa2Ca2Cu3Os.6 were successfully prepared and investigated. By examining the X-ray diffraction, mission electron microscopy, magnetization and resistivity, we found that HgBa2CaaCusOs+8 possesses an orthorhombic structure with lattice parameters o--5.451(2) A, b=5.432(2) ,~ and c= 15.826