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Carrier removal rate in neutron-irradiated silicon

โœ Scribed by Goleminov, N. G. ;Kramer-Ageev, E. A. ;Mironov, Yu. A.


Publisher
John Wiley and Sons
Year
1975
Tongue
English
Weight
372 KB
Volume
28
Category
Article
ISSN
0031-8965

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Charge carrier removal rates in n-type s
โœ V.V. Kozlovski; V.V. Emtsev; A.M. Ivanov; A.A. Lebedev; G.A. Oganesyan; D.S. Pol ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 202 KB

In contrast to irradiated Si, the information on removal rates of charge carriers in irradiated SiC is meager and often contradictory. This is due to serious difficulties in crystal growth which, in turn, may have a profound effect on properties of initial materials. In the present work we compare t