๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

On the carrier removal phenomenon in silicon after proton irradiation

โœ Scribed by R. Gopal; S. Ahmad

Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
707 KB
Volume
36
Category
Article
ISSN
0038-1101

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Charge carrier removal rates in n-type s
Charge carrier removal rates in n-type silicon and silicon carbide subjected to electron and proton irradiation
โœ V.V. Kozlovski; V.V. Emtsev; A.M. Ivanov; A.A. Lebedev; G.A. Oganesyan; D.S. Pol ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 202 KB

In contrast to irradiated Si, the information on removal rates of charge carriers in irradiated SiC is meager and often contradictory. This is due to serious difficulties in crystal growth which, in turn, may have a profound effect on properties of initial materials. In the present work we compare t

Study of the annealing effect on silicon
Study of the annealing effect on silicon microstrip detectors built on ใ€ˆ1 1 1ใ€‰ and ใ€ˆ1 0 0ใ€‰ substrates after 34 MeV proton irradiation
โœ D. Creanza; D. Giordano; M. de Palma; L. Fiore; N. Manna; S. My; V. Radicci; P. ๐Ÿ“‚ Article ๐Ÿ“… 2004 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 845 KB

The behaviour of the leakage current, interstrip resistance and capacitance have been studied on silicon microstrip detectors during an annealing period equivalent to C10 8 min at room temperature, after 34 MeV proton irradiation. A comparison between samples of the same geometry built on /1 0 0S an