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Carrier recombination through donors/acceptors in heavily doped silicon

✍ Scribed by Hu, Chenming; Oldham, William G.


Book ID
120041438
Publisher
American Institute of Physics
Year
1979
Tongue
English
Weight
590 KB
Volume
35
Category
Article
ISSN
0003-6951

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The activation behavior of the minority-carrier mobility and diffusivity in heavily doped (~102Β° cm -3) Si (Si:As) was investigated in the temperature range, 20 -350 K. Experimental results indicate that hole transitions between the valence band and localized shallow states give rise to the observed