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Carrier recombination processes in GaN, AlGaN, and InGaN epilayers

✍ Scribed by Ichimiya, M. ;Hayashi, T. ;Watanabe, M. ;Ohata, T. ;Ishibashi, A.

Book ID
105362468
Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
196 KB
Volume
199
Category
Article
ISSN
0031-8965

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## Abstract Time‐resolved four‐wave mixing and photoluminescence techniques have been combined for studies of MOCVD‐grown In~__x__~Ga~1–__x__~N/GaN/sapphire heterostructures with different indium content (0.08 < __x__ < 0.15). In‐plane diffusion and recombination of spatially‐modulated carriers, co