✦ LIBER ✦

Carrier Mobility in Doped Nondegenerate Semiconductors

✍ Scribed by N. M. Khamidullina

Publisher: John Wiley and Sons
Year: 1983
Tongue: English
Weight: 403 KB
Volume: 120
Category: Article
ISSN: 0370-1972
DOI: 10.1002/pssb.2221200106

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Mobility of electrons in nondegenerate s

Mobility of electrons in nondegenerate semiconductors considering electron-electron scattering

✍ M. S. Sodha; P. C. Eastman 📂 Article 📅 1958 🏛 Springer 🌐 English ⚖ 178 KB

Mobility Edge in Nondegenerate Semicondu

Mobility Edge in Nondegenerate Semiconductor with Random Potential of Charged Impurities

✍ M.S. Kagan; E.G. Landsberg; N.G. Zhdanova; I.V. Altukhov 📂 Article 📅 1998 🏛 John Wiley and Sons 🌐 English ⚖ 152 KB 👁 2 views

Charge Carrier Mobility at the Mobility

Charge Carrier Mobility at the Mobility Edge in Amorphous and Liquid Semiconductors

✍ M. R. Boon 📂 Article 📅 1972 🏛 John Wiley and Sons 🌐 English ⚖ 164 KB

Theory of carrier mobility in polar semi

Theory of carrier mobility in polar semiconductors-II. Solid solutions

✍ B.S. Krishnamurthy; K.P. Sinha 📂 Article 📅 1966 🏛 Elsevier Science 🌐 English ⚖ 619 KB

Theory of carrier mobility in polar semi

Theory of carrier mobility in polar semiconductors II. Solid solutions

✍ B.S. Krishnamurthy; K.P. Sinha 📂 Article 📅 1966 🏛 Elsevier Science 🌐 English ⚖ 129 KB

Trap controlled minority-carrier mobilit

Trap controlled minority-carrier mobility in heavily doped silicon

✍ A. Neugroschel; F.A. Lindholm; C.T. Sah 📂 Article 📅 1985 🏛 Elsevier Science ⚖ 381 KB

The activation behavior of the minority-carrier mobility and diffusivity in heavily doped (~102° cm -3) Si (Si:As) was investigated in the temperature range, 20 -350 K. Experimental results indicate that hole transitions between the valence band and localized shallow states give rise to the observed