## Abstract We report on the thermal evolution of the photoluminescence (PL) from high In‐content InN/In~0.9~Ga~0.1~N multiple‐quantum wells (MQWs) synthesized by plasma‐assisted molecular‐beam epitaxy on GaN‐on‐sapphire templates. The structural quality and the well/barrier thickness uniformity in
✦ LIBER ✦
Carrier localization in InN/InGaN multiple-quantum wells with high In-content
✍ Scribed by Valdueza-Felip, S.; Rigutti, L.; Naranjo, F. B.; Ruterana, P.; Mangeney, J.; Julien, F. H.; González-Herráez, M.; Monroy, E.
- Book ID
- 127179647
- Publisher
- American Institute of Physics
- Year
- 2012
- Tongue
- English
- Weight
- 825 KB
- Volume
- 101
- Category
- Article
- ISSN
- 0003-6951
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