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Carrier localization effect in polarized InGaN multiple quantum wells

✍ Scribed by A. Žukauskas; K. Kazlauskas; G. Tamulaitis; J. Mickevičius; S. Juršėnas; G. Kurilčik; S. Miasojedovas; M. Springis; I. Tale; Yung-Chen Cheng; Hsiang-Chen Wang; Chi-Feng Huang; C. C. Yang

Publisher: John Wiley and Sons
Year: 2005
Tongue: English
Weight: 163 KB
Volume: 2
Category: Article
ISSN: 1862-6351
DOI: 10.1002/pssc.200461428

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