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Carrier lifetime studies in Ge using microwave and infrared light techniques

✍ Scribed by E. Gaubas; M. Bauža; A. Uleckas; J. Vanhellemont

Book ID
103846489
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
367 KB
Volume
9
Category
Article
ISSN
1369-8001

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## Abstract We report on a contactless, all‐optical study of carrier diffusion and recombination kinetics in single‐crystalline diamond layers using the light‐induced transient grating (LITG) technique. Decay times of transient diffraction grating yielded carrier lifetime of __τ__~R~ ≈ 3 ns and bip