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Carrier Lifetime and Electron Spin Relaxation Time in (110)-Oriented GaAs–AlGaAs Quantum-Well Micro-Posts

✍ Scribed by Yokota, N.; Ikeda, K.; Nishizaki, Y.; Koh, S.; Kawaguchi, H.


Book ID
119805829
Publisher
IEEE
Year
2010
Tongue
English
Weight
373 KB
Volume
22
Category
Article
ISSN
1041-1135

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Correlation between electron spin relaxa
✍ Satoshi Iba; Hiroshi Fujino; Toshiyasu Fujimoto; Shinji Koh; Hitoshi Kawaguchi 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 620 KB

The correlation between the electron spin relaxation time t s and the hetero-interface roughness in (11 0)-oriented GaAs/AlGaAs multiple-quantum wells (MQWs) was investigated using growth interruption during molecular beam epitaxy growth. t s was characterized using polarization-and time-resolved PL