Carrier injection level dependence of post-breakdown metastability in semi-insulating GaAs

✍ Scribed by Y.L. Luo; Y.W. Zhao; S. Fung; C.D. Beling

• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 154 KB
• Volume: 127
• Category: Article
• ISSN: 0038-1098
• DOI: 10.1016/s0038-1098(03)00443-5

✦ Synopsis

Recently, a room temperature electrically induced metastability in semi-insulating (SI)-GaAs has been reported in which the normally high resistance state of SI-GaAs converts into a low resistance state when breakdown electric fields are applied to the metal/SI-GaAs/metal system. The low resistance state continues to persist when the electric field is lowered below the breakdown bias and as such may be treated as metastable state of the material. This phenomenon is believed to be closely related to the 'lock-on' effect utilized in high power photoconductive semiconductor switches made from SI-GaAs. The present study seeks to understand the mechanism for this electrically induced metastability by studying the influence of the injection current on the metastable phase. The data favor an interpretation of the high current state of the SI-GaAs in terms of double carrier injection and the sustaining of an internal electron -hole plasma in the material.