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Carrier hopping in InAs/AlyGa1−yAs quantum dot heterostructures: effects on optical and laser properties

✍ Scribed by A Polimeni; A Patanè; M Henini; L Eaves; P.C Main; G Hill


Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
91 KB
Volume
7
Category
Article
ISSN
1386-9477

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We report the effects of accumulated strain by stacking on the surface and optical properties of stacked 1.3 mm InAs/GaAs quantum dot (QD) structures grown by MOCVD. It is found that the surface of the stacked QD structures becomes more and more undulated with stacking, due to the increased strain i