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Carrier distribution and relaxation-induced defects of InAs/GaAs quantum dots

โœ Scribed by Wang, J. S.; Chen, J. F.; Huang, J. L.; Wang, P. Y.; Guo, X. J.

Book ID
121823894
Publisher
American Institute of Physics
Year
2000
Tongue
English
Weight
330 KB
Volume
77
Category
Article
ISSN
0003-6951

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