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Carrier concentration dependence of donor activation energy in n-type GaN epilayers grown on Si (1 1 1) by plasma-assisted MBE

โœ Scribed by Mahesh Kumar; Thirumaleshwara N. Bhat; Basanta Roul; Mohana K. Rajpalke; A.T. Kalghatgi; S.B. Krupanidhi


Book ID
113787618
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
519 KB
Volume
47
Category
Article
ISSN
0025-5408

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