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Carrier concentration dependence of donor activation energy in n-type GaN epilayers grown on Si (1 1 1) by plasma-assisted MBE

✍ Scribed by Mahesh Kumar; Thirumaleshwara N. Bhat; Basanta Roul; Mohana K. Rajpalke; A.T. Kalghatgi; S.B. Krupanidhi

No coin nor oath required. For personal study only.

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Carrier concentration dependence of donor activation energy in n-type GaN epilayers grown on Si (1&#xa0;1&#xa0;1) by plasma-assisted MBE