𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Carbide and nitride/carbide layers in iron synthesized by ion implantation

✍ Scribed by A.M.C. Pérez-Martin; A.M. Vredenberg; L. de Wit; J.S. Custer

Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
352 KB
Volume
19
Category
Article
ISSN
0921-5107

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Formation of iron carbonitride and iron
Formation of iron carbonitride and iron carbide phases during nitrogen ion implantation
✍ Dr. Bernd Rauschenbach; Prof. Dr. Karl Hohmuth 📂 Article 📅 1984 🏛 John Wiley and Sons 🌐 English ⚖ 520 KB

olycrystitllitie iroit is iiiipltititecl with tiitrogeu ions wit11 high doses iit rootii tetiipercitrirr. During nitrogen ion iriipluntation iron is doped with ctw1,on by recoil iriipltintation. The forriiation and the trunsformution of iron carlmnitrides and iron carbides are investigatetl by high-

Defect production and annealing in ion i
Defect production and annealing in ion implanted silicon carbide
✍ A. Heft; E. Wendler; T. Bachmann; E. Glaser; W. Wesch 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 375 KB

In the present study we investigated damage production and annealing in 6H SiC wafers implanted with 230 keV Ga + ions in a wide dose range at various temperatures. Analysis of the implanted layers was performed by the Rutherford backscattering (RBS) channeling technique and by transmission electron

Properties of oxide and nitride layers i
Properties of oxide and nitride layers in aluminium produced by high dose ion implantation
✍ Shigeo Ohira; Masaya Iwaki 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 652 KB

Recent advances in high dose ion implantation The surface properties such as depth profile, techniques have produced silicon-on-insulator chemical bond and structure, and electrical prop-(SOI) substrates for the fabrication of electronic erties of oxide and nitride layers in aluminium devices. Oxyge