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Capacitive gauge for determining the dielectric properties of gases and liquids

✍ Scribed by I. G. Minaev


Publisher
Springer US
Year
1987
Tongue
English
Weight
159 KB
Volume
30
Category
Article
ISSN
0543-1972

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C-V characteristics of metal-insulator-semiconductor (MIS) structures based on 6H-SiC are investigated. These characteristics are influenced by non-equilibrium charge carrier conditions at the insulator-semiconductor interface. Depending on the sweep rate of the bias voltage the traps exhibit either