Capacitance-voltage characterization of n-ZnSe/n-GaAs heterojunctions
β Scribed by Takashi Matsumoto; Nobuki Kokubo; Kenji Kawakami; Takamasa Kato
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 392 KB
- Volume
- 117
- Category
- Article
- ISSN
- 0022-0248
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
P-ZnSe/GaAs heterojunctions, prepared by chemical vapour deposition (CVD) of ZnSe thin films on GaAs substrates at temperatures between 490 and 650Β°C were characterized chemically and optically. Depth profiling of Ga and Se concentrations by secondary ion mass spectroscopy yielded the CVD-growth tem
Capacitance-voltage (C V) characteristics and temperature dependence of current density-voltage (J-V) characteristics of as-grown amorphous gallium arsenide (a-GaAs) thin film heterojunctions formed on n-type crystalline silicon (c-Si(n)) have been measured. It has been found that the depletion laye