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Capacitance-Voltage Characteristics of Au-Si Schottky Diodes: Influence of Electron Irradiation

✍ Scribed by Lewerentz, B. M. S. ;Svensson, B. G.

Publisher
John Wiley and Sons
Year
1989
Tongue
English
Weight
246 KB
Volume
114
Category
Article
ISSN
0031-8965

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Current-voltage (I-V) characteristics of Au/Ni/n-GaN Schottky diodes have been measured in 40-320 K temperature range, and analyzed in terms of thermionic emission theory by incorporating the concept of barrier inhomogeneity at the metal/semiconductor interface through a Gaussian distribution functi