Capacitance and current–voltage simulation of EEPROM technology highly doped MOS structures

✍ Scribed by S. Croci; C. Plossu; S. Burignat; P. Boivin

• Book ID: 110442355
• Publisher: Springer US
• Year: 2003
• Tongue: English
• Weight: 283 KB
• Volume: 14
• Category: Article
• ISSN: 0957-4522
• DOI: 10.1023/a:1023919811012