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Calculations of exchange interaction in the impurity band of two-dimensional semiconductors with out-of-plane impurities

✍ Scribed by Ponomarev, I. V.; Flambaum, V. V.; Efros, A. L.


Book ID
120981089
Publisher
The American Physical Society
Year
1999
Tongue
English
Weight
158 KB
Volume
60
Category
Article
ISSN
1098-0121

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The binding energy and wave function of a ground state of a shallow hydrogenic impurity in two-dimensional semiconductors with isotropic and anisotropic effective mass of carriers __m__ ^\*^ = { __m__ ~βŠ₯~, __m__ ~βŠ₯~, __m__ ~||~ } are derived. The calculations are performed by the variational method