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Calculation of the bending area of threading dislocations of InGaAs quantum dots on a GaAs substrate

โœ Scribed by Zhou, Shuai; Liu, Yumin; Wang, Donglin; Yu, Zhongyuan

Book ID
123349944
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
455 KB
Volume
63
Category
Article
ISSN
0749-6036

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Controlled growth of InP/In0.48Ga0.52P q
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โœ A. Ugur; F. Hatami; W.T. Masselink ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 865 KB

Both the density and the ordering of InP quantum dots (QDs) grown on In 0.48Ga0.52 P/GaAs are controlled through the growth conditions. The control of the alignment of the QDs is achieved by determining the morphology of the In 0.48 Ga 0.52 P buffer through its growth temperature. For buffer layer g